IBM's newest 5nm achievement illustrates the promise of new manufacturing technologies and the long-term usefulness of gate-all-around FET structures.
The post IBM Announces 5nm Breakthrough Using Silicon Nanosheets appeared first on ExtremeTech.
from ExtremeTechExtremeTech https://www.extremetech.com/computing/250424-ibm-announces-5nm-breakthrough-claims-silicon-nanosheet-technology-will-drive-future-performance-power-efficiency-improvements
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